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Issue DateTitleAuthor(s)
1-Aug-2004Annealing effect on boron high-energy-ion-implantation-induced defects inHsu, WC; Liang, MS; Chen, SC; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Anomalous substrate current in polycrystalline silicon thin-film transistorsZan, HW; Chen, SC; Wang, SH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2006Connecting wave functions at a three-leg junction of one-dimensional channelsVoo, KK; Chen, SC; Tang, CS; Chu, CS; 電子物理學系; Department of Electrophysics
1-May-2001Effect of catalyst on growth behavior of carbon nanotube synthesizing by microwave heating thermal chemical vapor deposition processChen, SC; Shih, LY; Chang, YC; Tu, GC; Lin, IN; 材料科學與工程學系; Department of Materials Science and Engineering
2004Effects of base oxide in HfSiO/SiO2 high-k gate stacksWu, WH; Chen, MC; Wang, MF; Hou, TH; Yao, LG; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2005Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacksWu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2005Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO2 high-k gate stacksWu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-Dec-2005The electrochemical polishing behavior of porous austenitic stainless steel (AISI 316L) in phosphoric-sulfuric mixed acidsChen, SC; Tu, GC; Huang, CA; 材料科學與工程學系; Department of Materials Science and Engineering
2003Electroluminescence characteristics of aromatic polyimides by vapor deposition polymerizationHsu, SC; Whang, WT; Chen, SC; 材料科學與工程學系; Department of Materials Science and Engineering
15-Feb-1999Evaluation of a modified chitosan biopolymer for coagulation of colloidal particlesPan, JRS; Huang, CP; Chen, SC; Chung, YC; 環境工程研究所; Institute of Environmental Engineering
1-Jun-2006HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicideWu, CH; Hung, BF; Chin, A; Wang, SJ; Yen, FY; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technologyChung, SS; Yeh, CH; Feng, SJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2006Impact of STI on the reliability of narrow-width pMOSFETs with advanced ALD N/O gate stackChung, SS; Yeh, CH; Feng, HJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technologyLee, DY; Lin, HC; Chen, CL; Huang, TY; Wang, TH; Lee, TL; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2003InAs/GaAs quantum dot infrared photodetectors with different growth temperaturesWang, SY; Chen, SC; Lin, SD; Lin, CJ; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-Sep-2005An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrateChen, SC; Lou, JC; Chien, CH; Liu, PT; Chang, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999Magnetic analysis of a micromachined magnetic actuator using the finite element methodKo, CH; Yang, JJ; Chiou, JC; Chen, SC; Kao, TH; 電控工程研究所; Institute of Electrical and Control Engineering
1-Feb-2000Optimal condition for modification of chitosan: A biopolymer for coagulation of colloidal particlesHuang, CP; Chen, SC; Pan, JR; 環境工程研究所; Institute of Environmental Engineering
1-Oct-2002A physical model for the hysteresis phenomenon of the ultrathin ZrO2 filmWang, JC; Chiao, SH; Lee, CL; Lei, TF; Lin, YM; Wang, MF; Chen, SC; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1999Preparation and characterization of garnet phosphor nanoparticles derived from oxalate coprecipitationChen, TM; Chen, SC; Yu, CJ; 應用化學系; Department of Applied Chemistry
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