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Showing results 1 to 9 of 9
Issue DateTitleAuthor(s)
1-Jun-1996Back-gate forward bias method for low-voltage CMOS digital circuitsChen, MJ; Ho, JS; Huang, TH; Yang, CH; Jou, YN; Wu, T; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering
1-Sep-2003Burst synchronization of slotted random access with preamble power ramping in the reverse link of CDMA systemsSheen, WH; Tseng, CC; Ho, JS; 電信工程研究所; Institute of Communications Engineering
1-Feb-1996High gain p-n-p gated lateral bipolar action in a fully depleted counter-type: Channel p-MOSFET structureHo, JS; Huang, TH; Chen, MJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1998High-pressure synthesis and characterization of rare-earth substituted (Y,R)(2)Ba4Cu7O15-delta (R = La, Tb, Yb, Lu) cupratesChen, TM; Lee, SY; Ho, JS; 應用化學系; Department of Applied Chemistry
1-May-2004A low-power ASIC design for cell search in the W-CDMA systemLi, CF; Chu, YS; Sheen, WH; Tian, FC; Ho, JS; 電信工程研究所; Institute of Communications Engineering
1-May-1996Optimizing the match in weakly inverted MOSFET's by gated lateral bipolar actionChen, MJ; Ho, JS; Chang, DY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1997Synthesis and characterization of (Tl1-xMx)(Ba,Sr)(2)Ca2Cu3Oz (M = Pb, K, Bi) cuprates: The chemical control of high-temperature superconductivityChen, TM; Ho, JS; 交大名義發表; 應用化學系; National Chiao Tung University; Department of Applied Chemistry
1-Apr-1997A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variationChen, MJ; Ho, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1997A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variationChen, MJ; Ho, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 9 of 9