瀏覽 的方式: 作者 Lin, M
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| 公開日期 | 標題 | 作者 |
| 1-Apr-1999 | Leakage current reduction of chemical-vapor-deposited Ta2O5 films on rugged polycrystalline silicon electrode for dynamic random access memory application | Lin, M; Chang, CY; Huang, TY; Shieh, WY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Nov-1999 | A multilevel interconnect technology with intrametal air gap for high-performance 0.25-mu m-and-beyond devices manufacturing | Lin, M; Chang, CY; Huang, TY; Lin, ML; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Jun-1998 | Rugged surface polycrystalline silicon film formed by rapid thermal chemical vapor deposition for dynamic random access memory stacked capacitor application | Lin, M; Chang, CY; Huang, TY; Kuo, UJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |