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Issue DateTitleAuthor(s)
24-Oct-2011Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxyYu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
6-Dec-2010Effect of substrate misorientation on the material properties of GaAs/Al(0.3)Ga(0.7)As tunnel diodesYu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C.; 材料科學與工程學系; Department of Materials Science and Engineering
6-Dec-2010Effect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodesYu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jun-2011Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jun-2011Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2014Growth Parameters Optimization of GaN High Electron Mobility Transistor Structure on Silicon Carbide SubstrateWong, Y. Y.; Huang, S. C.; Huang, W. C.; Lumbantoruan, F.; Chiu, Y. S.; Wang, H. C.; Yu, H. W.; Chang, E. Y.; 台積電與交大聯合研發中心; TSMC/NCTU Joint Research Center
26-Jul-2010The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitorTrinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.; 材料科學與工程學系; Department of Materials Science and Engineering
26-Jul-2010The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitorTrinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.; 材料科學與工程學系; Department of Materials Science and Engineering
2014Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation LayerLiu, S. C.; Wong, Y. Y.; Lin, Y. C.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2009Study of the thermal property of copper oxide nanowiresDee, C. F.; Wong, Y. Y.; Lim, K. P.; Majlis, B. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
Showing results 1 to 10 of 10