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Browsing by Author Yano, Masaru

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Issue DateTitleAuthor(s)
1-Aug-2019The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memoriesChiu, Yung-Yueh; Lin, Cheng-Han; Yang, Jhih-Siang; Yang, Bo-Jun; Aoki, Minoru; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro; 電機工程學系; Department of Electrical and Computer Engineering
1-Jul-2016Impact of String Pattern on the Threshold-Voltage Spread of Program-Inhibited Cell in NAND FlashChiu, Yung-Yueh; Aoki, Minoru; Yano, Masaru; Shirota, Riichiro; 電機工程學系; 電信工程研究所; Department of Electrical and Computer Engineering; Institute of Communications Engineering
1-Mar-2019Transconductance Distribution in Program/Erase Cycling of NAND Flash Memory Devices: a Statistical InvestigationChiu, Yung-Yueh; Lin, I-Chun; Chang, Kai-Chieh; Yang, Bo-Jun; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro; 交大名義發表; 電信工程研究所; National Chiao Tung University; Institute of Communications Engineering
Showing results 1 to 3 of 3