Browsing by Author Aluguri, Rakesh
Showing results 1 to 8 of 8
| Issue Date | Title | Author(s) |
| 23-Mar-2018 | Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion | Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Apr-2013 | Enhanced charge storage characteristics of nickel nanocrystals embedded flash memory structures | Ray, Sounak K.; Panda, Debashis; Aluguri, Rakesh; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-May-2017 | Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer | Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Jan-2017 | High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM Device | Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 30-Aug-2018 | The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices | Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Aluguri, Rakesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering |
| 1-Mar-2019 | One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications | Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Sep-2016 | Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays | Aluguri, Rakesh; Tseng, Tseung-Yuen; 交大名義發表; National Chiao Tung University |
| 1-Apr-2018 | Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device | Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
