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Browsing by Author Aluguri, Rakesh
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Showing results 1 to 8 of 8
Issue Date
Title
Author(s)
23-Mar-2018
Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion
Kumar, Dayanand
;
Aluguri, Rakesh
;
Chand, Umesh
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-Apr-2013
Enhanced charge storage characteristics of nickel nanocrystals embedded flash memory structures
Ray, Sounak K.
;
Panda, Debashis
;
Aluguri, Rakesh
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
15-May-2017
Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
Kumar, Dayanand
;
Aluguri, Rakesh
;
Chand, Umesh
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-Jan-2017
High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM Device
Kumar, Dayanand
;
Aluguri, Rakesh
;
Chand, Umesh
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
30-Aug-2018
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices
Chandrasekaran, Sridhar
;
Simanjuntak, Firman Mangasa
;
Aluguri, Rakesh
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
電機工程學系
;
Department of Electronics Engineering and Institute of Electronics
;
Department of Electrical and Computer Engineering
1-Mar-2019
One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications
Kumar, Dayanand
;
Aluguri, Rakesh
;
Chand, Umesh
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-Sep-2016
Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays
Aluguri, Rakesh
;
Tseng, Tseung-Yuen
;
交大名義發表
;
National Chiao Tung University
1-Apr-2018
Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device
Kumar, Dayanand
;
Aluguri, Rakesh
;
Chand, Umesh
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics