瀏覽 的方式： 作者 Ambrosi, Elia
顯示 1 到 3 筆資料，總共 3 筆
| 公開日期 | 標題 | 作者 |
| 1-Jan-2019 | Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion | Wang, Wei; Covi, Erika; Lin, Yu-Hsuan; Ambrosi, Elia; Ielmini, Daniele; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Sep-2019 | Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling | Wang, Wei; Laudato, Mario; Ambrosi, Elia; Bricalli, Alessandro; Covi, Erika; Lin, Yu-Hsuan; Ielmini, Daniele; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Sep-2019 | Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion-Part II: Compact Modeling | Wang, Wei; Laudato, Mario; Ambrosi, Elia; Bricalli, Alessandro; Covi, Erika; Lin, Yu-Hsuan; Ielmini, Daniele; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
