瀏覽 的方式： 作者 Aoki, H
顯示 1 到 5 筆資料，總共 5 筆
| 公開日期 | 標題 | 作者 |
| 2004 | CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications | Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 30-一月-2004 | CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications | Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 30-一月-2004 | Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications | Chang, TC; Yan, ST; Liu, R; Lin, ZW; Aoki, H; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 22-十一月-2004 | Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004) | Chang, TC; Yan, ST; Liu, PT; Lin, ZW; Aoki, H; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-五月-2004 | Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application | Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
