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Issue DateTitleAuthor(s)
1-Jun-19922 NEW GENERALIZED EQUATIONS FOR MINORITY-CARRIER TRANSPORT IN BIPOLAR-TRANSISTORS WITH HEAVILY DOPED BASE AND NONUNIFORM BAND-STRUCTURECHANG, KM; TSAI, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1994ACTIVITY-COEFFICIENTS OF ELECTRONS AND HOLES IN DEGENERATE SEMICONDUCTORS WITH NONUNIFORM COMPOSITIONCHANG, KM; YEH, TH; WANG, SW; LEE, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1988ACTIVITY-COEFFICIENTS OF ELECTRONS AND HOLES IN SEMICONDUCTORS WITH NONUNIFORM COMPOSITION .1. NONDEGENERATECHANG, KM; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering
1-Apr-1990BAND DISCONTINUITIES - A SIMPLE ELECTROCHEMICAL APPROACHCHANG, KM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1988A CONSISTENT MODEL FOR CARRIER TRANSPORT IN HEAVILY DOPED SEMICONDUCTOR-DEVICESCHANG, KM; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-Jun-1989A CONSISTENT MODEL FOR SEMICONDUCTOR HETEROJUNCTIONS IN EQUILIBRIUMCHANG, KM; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering
1-Jun-1995A FIBEROPTIC REFLECTIVE DISPLACEMENT MICROMETERKO, WH; CHANG, KM; HWANG, GJ; 交大名義發表; National Chiao Tung University
1-Jul-1993NEW PHYSICAL FORMULATION OF THE THERMIONIC EMISSION CURRENT AT THE HETEROJUNCTION INTERFACECHANG, KM; TSAI, JY; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1994A SIMPLE AND EFFICIENT PRETREATMENT TECHNOLOGY FOR SELECTIVE TUNGSTEN DEPOSITION IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTORCHANG, KM; YEH, TH; LI, CH; WANG, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1995STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETSWANG, TH; CHANG, TE; HUANG, CM; YANG, JY; CHANG, KM; CHIANG, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 10 of 10