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Issue DateTitleAuthor(s)
1983A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATIONWU, CY; CHANG, MC; SHEY, AJ; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-Nov-1992MODELING HOT-ELECTRON GATE CURRENT IN SI MOSFETS USING A COUPLED DRIFT-DIFFUSION AND MONTE-CARLO METHODHUANG, CM; WANG, TH; CHEN, CN; CHANG, MC; FU, J; 電控工程研究所; Institute of Electrical and Control Engineering
1980POWER LOSSES AND OPTIMUM OPERATION CONDITIONS OF SILICON QUASI-READ DIODESCHANG, MC; CHEN, MC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1978QUASI-STATIC ANALYSIS OF X-BAND DOUBLE-DRIFT LO-HI-LO SILICON IMPATT DIODESCHANG, MC; CHEN, MC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-Feb-1995TRANSCONDUCTANCE ENHANCEMENT DUE TO BACK BIAS FOR SUBMICRON NMOSFETGUO, JC; CHANG, MC; LU, CY; HSU, CCH; CHUNG, SSS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 5 of 5