瀏覽 的方式： 作者 CHANG, PH
顯示 1 到 10 筆資料，總共 10 筆
| 公開日期 | 標題 | 作者 |
| 1994 | Al2O3 films formed by anodic oxidation of Al-1wt.%Si-0.5wt%Cu films | CHIU, S; CHANG, PH; TUNG, CH; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-二月-1995 | AL2O3 FILMS FORMED BY ANODIC-OXIDATION OF AL-1 WEIGHT PERCENT SI-0.5 WEIGHT PERCENT CU FILMS | CHIU, RL; CHANG, PH; TUNG, CH; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-九月-1988 | BARRIER EFFECT OF E-BEAM EVAPORATED TUNGSTEN INTERLAYER IN AL/W/PTSI METALLIZATION LAYER | CHIOU, BS; LO, HS; CHANG, PH; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-三月-1989 | CHARACTERISTICS OF TITANIUM SILICIDE FORMED BY SI/MO/TI TRILAYER METALLIZATION | CHIOU, BS; YANG, BJ; CHANG, PH; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics |
| 1-五月-1995 | THE EFFECT OF ANODIZING TEMPERATURE ON ANODIC OXIDE FORMED ON PURE AL THIN-FILMS | CHIU, RL; CHANG, PH; TUNG, CH; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-十月-1992 | THE EFFECT OF SI AND CU ON THE INTERACTIONS BETWEEN AL FILMS AND A TIW BARRIER LAYER | CHANG, PH; CHEN, HM; LIU, HY; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-十月-1989 | EQUIVALENT-CIRCUIT MODEL IN GRAIN-BOUNDARY BARRIER LAYER CAPACITORS | CHIOU, BS; LIN, ST; DUH, JG; CHANG, PH; 電控工程研究所; Institute of Electrical and Control Engineering |
| 15-五月-1994 | INTERACTIONS BETWEEN AL-1 WT-PERCENT SI THIN-FILM AND W-TI BARRIER LAYER | CHANG, PH; CHEN, HM; LIU, HY; BOHLMAN, JG; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-七月-1987 | MICROSTRUCTURE AND PROPERTIES OF MULTILAYER-DERIVED TUNGSTEN SILICIDE | CHIOU, BS; RAU, HL; CHANG, PH; DUH, JG; 電控工程研究所; Institute of Electrical and Control Engineering |
| 15-三月-1995 | STRUCTURES OF TANTALUM PENTOXIDE THIN-FILMS FORMED BY REACTIVE SPUTTERING OF TA METAL | CHANG, PH; LIU, HY; 材料科學與工程學系; Department of Materials Science and Engineering |
