| 公開日期 | 標題 | 作者 |
| 21-八月-1995 | ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION | TSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-四月-1994 | CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE | CHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering |
| 15-十月-1994 | CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION | JUNG, TG; CHANG, CY; LIU, CS; CHANG, TC; LIN, HC; TSAI, WC; HUANG, GW; CHEN, LP; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-七月-1994 | EFFECT OF CROSS-PHASE MODULATION ON OPTICAL-PHASE CONJUGATION IN DISPERSION-SHIFTED FIBER | WEN, SF; CHI, S; CHANG, TC; 光電工程學系; Department of Photonics |
| 1-九月-1994 | EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMS | LIN, HC; CHANG, CY; CHEN, WH; TSAI, WC; CHANG, TC; JUNG, TG; LIN, HY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 27-六月-1994 | HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY | CHENG, TM; CHANG, CY; CHANG, TC; HUANG, JH; HUANG, MF; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 4-一月-1990 | INFORMATION RATE OF MCELIECE PUBLIC-KEY CRYPTOSYSTEM | LIN, MC; CHANG, TC; FU, HL; 應用數學系; Department of Applied Mathematics |
| 1-一月-1994 | LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION | JUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-四月-1994 | NANOMETER THICK SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE | CHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; WANG, PJ; LEE, TL; CHEN, LJ; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center |
| 15-十一月-1995 | THE NOVEL NONLINEAR DC RESPONSE OF AG THIN-FILMS DEPOSITED ON POROUS SILICON - A FRACTAL MODEL EXPLANATION | YOUNG, TF; KUO, WC; JIANG, IM; CHANG, TC; CHANG, CY; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center |
| 1-六月-1992 | A PRECISION ALIGNMENT WITH MOIRE TECHNIQUE AND DIFFERENTIAL-AMPLIFIER | CHANG, TC; WU, CW; CHOU, C; 光電工程學系; Department of Photonics |
| 1-十二月-1994 | QUANTUM CONFINEMENT EFFECTS OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE | CHANG, TC; CHANG, CY; JUNG, TG; CHEN, PA; TSAI, WC; WANG, PJ; CHEN, YF; PAN, SC; 電控工程研究所; Institute of Electrical and Control Engineering |
