| 公開日期 | 標題 | 作者 |
| 1-十二月-1992 | ACTIVATION MECHANISM OF IMPLANTED BORON IN A SI SUBSTRATE | JUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 23-十月-1995 | ANOMALOUS BIAS-STRESS-INDUCED UNSTABLE PHENOMENA OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS | TAI, YH; TSAI, JW; CHENG, HC; SU, FC; 奈米中心; Nano Facility Center |
| 23-十月-1995 | ANOMALOUS BIAS-STRESS-INDUCED UNSTABLE PHENOMENA OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS | TAI, YH; TSAI, JW; CHENG, HC; SU, FC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-1993 | CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURES | CHENG, HC; TAI, YH; FENG, MS; WANG, JJ; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 1994 | CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS | WANG, CK; YING, TL; WEI, CS; LIU, LM; CHENG, HC; LIN, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-六月-1995 | CHARACTERIZATION OF H-2/N-2 PLASMA PASSIVATION PROCESS FOR POLY-SI THIN-FILM TRANSISTORS (TFTS) | TSAI, MJ; WANG, FS; CHENG, KL; WANG, SY; FENG, MS; CHENG, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 1-十月-1992 | CHARACTERIZATION OF SILICIDED SHALLOW N+P JUNCTIONS FORMED BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATES | JUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-九月-1992 | CONVENTIONAL FURNACE AND RAPID THERMAL ANNEALING OF COBALT FILMS ON SI(111) | JUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-三月-1987 | CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDY OF THE GROWTH-KINETICS OF HEXAGONAL MOSI2 ON (001)SI | CHENG, JY; CHENG, HC; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-三月-1990 | THE EFFECT OF GATE ELECTRODES USING TUNGSTEN SILICIDES AND OR POLYSILICON ON THE DIELECTRIC CHARACTERISTICS OF VERY THIN OXIDES | CHENG, HC; CHAO, CY; SU, WD; CHANG, SW; LEE, MK; WU, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 9-一月-1995 | EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C | LIU, CC; LEE, CY; CHENG, KL; CHENG, HC; YEW, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-三月-1995 | EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS | LIN, CT; CHAO, CH; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC; 奈米中心; Nano Facility Center |
| 1-十一月-1995 | THE EFFECTS OF NH3 PLASMA PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS | WANG, FS; TSAI, MJ; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-1991 | EFFECTS OF P+-IMPLANTED POLY-SI ELECTRODES ON THE GATE DIELECTRIC CHARACTERISTICS OF THIN OXIDES | CHENG, HC; CHEN, WS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-五月-1995 | EFFECTS OF POLYSILICON ELECTRON-CYCLOTRON-RESONANCE ETCHING ON ELECTRICAL CHARACTERISTICS OF GATE OXIDES | KANG, TK; UENG, SY; DAI, BT; CHEN, LP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-1995 | EFFECTS OF POSTETCHING TREATMENTS ON ELECTRICAL CHARACTERISTICS OF THERMAL OXIDES ON REACTIVE-ION-ETCHED SILICON SUBSTRATES | CHENG, HC; UENG, SY; WANG, PW; KANG, TK; CHAO, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-二月-1992 | EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .1. THIN TITANIUM FILMS | JUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-二月-1992 | EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .2. THIN COBALT FILMS | JUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-1994 | EFFECTS OF VACANCIES ON THE ELECTRICAL CHARACTERISTICS OF METAL GAAS SCHOTTKY CONTACTS A QUANTITATIVE MODEL | SZE, JJ; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-二月-1995 | ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS WITH DOUBLE-ACTIVE-LAYER STRUCTURE | TSAI, MJ; WANG, PW; SU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
