瀏覽 的方式： 作者 CHOU, PF
顯示 1 到 6 筆資料，總共 6 筆
| 公開日期 | 標題 | 作者 |
| 1-十二月-1995 | A COMPREHENSIVE STUDY OF SUPPRESSION OF BORON PENETRATION BY AMORPHOUS-SI GATE IN P+-GATE PMOS DEVICES | LIN, CY; JUAN, KC; CHANG, CY; PAN, FM; CHOU, PF; HUNG, SF; CHEN, LJ; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-七月-1995 | EFFECT OF OXYGEN IMPURITY ON MICROSTRUCTURE AND BORON PENETRATION IN A BF2+ IMPLANTED LPCVD STACKED AMORPHOUS-SILICON P(+) GATED PMOS CAPACITOR | LIN, CY; PAN, FM; CHOU, PF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-三月-1995 | EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS | LIN, CT; CHAO, CH; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC; 奈米中心; Nano Facility Center |
| 15-九月-1994 | FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS | LIN, CT; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC; 奈米中心; Nano Facility Center |
| 1-六月-1994 | LOW-TEMPERATURE FORMATION OF PALLADIUM SILICIDED SHALLOW P(+)N JUNCTIONS USING IMPLANT THROUGH METAL TECHNOLOGY | LIN, CT; CHOU, PF; CHENG, HC; 奈米中心; Nano Facility Center |
| 1-五月-1995 | LOW-TEMPERATURE FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN PD2SI FILMS ON SI SUBSTRATES | LIN, CT; MA, KP; CHOU, PF; CHENG, HC; 奈米中心; Nano Facility Center |
