National Chiao Tung University Institutional Repository：瀏覽交通大學機構典藏

瀏覽的方式：作者 Chandrasekaran, Sridhar

顯示 1 到 12 筆資料，總共 12 筆

公開日期	標題	作者
1-四月-2018	Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer	Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
11-Sep-2017	Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory	Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
1-Jan-2020	Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning	Jung, Pei-Yu; Panda, Debashis; Chandrasekaran, Sridhar; Rajasekaran, Sailesh; Tseng, Tseung-Yuen; 交大名義發表; 材料科學與工程學系; 電子工程學系及電子研究所; National Chiao Tung University; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Nov-2019	Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme	Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
30-Aug-2018	The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices	Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Aluguri, Rakesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-Nov-2019	Improving linearity by introducing Al in HfO2 as a memristor synapse device	Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Saminathan, R.; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
9-四月-2020	Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications	Simanjuntak, Firman Mangasa; Ohno, Takeo; Chandrasekaran, Sridhar; Tseng, Tseung-Yuen; Samukawa, Seiji; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
20-九月-2017	Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell	Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
1-Dec-2017	Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell	Simanjuntak, Firman Mangasa; Singh, Pragya; Chandrasekaran, Sridhar; Lumbantoruan, Franky Juanda; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 材料科學與工程學系; 資訊工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
17-Aug-2020	Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices	Chang, Lung-Yu; Simanjuntak, Firman Mangasa; Hsu, Chun-Ling; Chandrasekaran, Sridhar; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
19-Oct-2018	Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell	Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-May-2019	ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices	Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering

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