| 公開日期 | 標題 | 作者 |
| 15-十月-2000 | A 1.2-V operation power pseudomorphic high electron mobility transistor for personal handy phone handset application | Chang, EY; Lee, DH; Chen, SH; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-二月-2005 | 2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT | Chu, LH; Chang, EY; Chen, SH; Lien, YC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-1997 | 2-V-operation delta-doped power HEMT's for personal handy-phone systems | Lai, YL; Chang, EY; Chang, CY; Liu, TH; Wang, SP; Hsu, HT; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-1997 | 2-V-operation delta-doped power HEMT's for personal handy-phone systems | Lai, YL; Chang, EY; Chang, CY; Liu, TH; Wang, SP; Hsu, HT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2001 | 2.4 V-operated enhancement mode PHEMT with 32 dBm output power and 61 % power efficenciecy | Chen, SH; Chang, EY; Lin, YC; 材料科學與工程學系; Department of Materials Science and Engineering |
| 2001 | 2.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system application | Chen, SH; Chang, EY; Lin, YC; Lee, CS; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr |
| 1-五月-1996 | 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications | Lai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 1-五月-1996 | 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications | Lai, YL; Chang, EY; Chang, CY; Chen, TK; Liu, TH; Wang, SP; Chen, TH; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 2001 | AIGaN Schottky characteristics after hybrid photo-enhanced wet and inductively coupled plasma etch | Huang, WJ; Fang, CY; Wong, JS; Lee, CS; Chang, EY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 2001 | AIGaN/GaN HEMT sub-bands study using low-temperature photoluminescence | Fang, CY; Lin, CF; Lee, CS; Chang, EY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 2000 | Backside copper metallization of GaAs MESFET's using Ta and TaN as diffusion barrier | Chang, EY; Chen, CY; Chang, L; Chen, SH; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-六月-2001 | Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier | Chen, CY; Chang, EY; Chang, L; Chen, SH; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr |
| 1-七月-2004 | Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applications | Chang, EY; Lin, YC; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr |
| 15-二月-2004 | Controlled placement of self-organized Ge dots on patterned Si (001) surfaces | Lee, HM; Yang, TH; Luo, GL; Chang, EY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr |
| 1-七月-2006 | Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs | Lin, YC; Chang, EY; Yamaguchi, H; Hirayama, Y; Chang, XY; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr |
| 2002 | An etch back technique to achieve sub-micron T-gate for GaAsFETs using I-line stepper and phase shift mask (PSM) | Fu, DK; Chen, SH; Chang, HC; Chang, EY; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-七月-2003 | Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations | Fang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics |
| 15-六月-2003 | Flower-like distributed self-organized Ge dots on patterned Si (001) substrates | Lee, HM; Yang, TH; Luo, GL; Chang, EY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr |
| 1-一月-2001 | A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistors | Chang, EY; Lai, YL; Lee, YS; Chen, SH; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-一月-2005 | A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate | Chang, EY; Yang, TH; Luo, GL; Chang, CY; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr |
