瀏覽 的方式： 作者 Chang, Hsiang-Yu
顯示 1 到 3 筆資料，總共 3 筆
| 公開日期 | 標題 | 作者 |
| 11-四月-2016 | A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure | Tsai, Tsung-Ling; Chang, Hsiang-Yu; Lou, Jesse Jen-Chung; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-2015 | Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices | Tsai, Tsung-Ling; Chang, Hsiang-Yu; Jiang, Fa-Shen; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2015 | 高介電材料於導電橋式及透明電阻記憶體之轉態特性研究 | 張翔喻; Chang, Hsiang-Yu; 曾俊元; Tseng, Tseung-Yuen; 電子工程學系 電子研究所 |
