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Browsing by Author Chang, K. Y.

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Issue DateTitleAuthor(s)
2014The Experimental Demonstration of the BTI-Induced Breakdown Path in 28nm High-k Metal Gate Technology CMOS DevicesHsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Chang, K. Y.; Liu, C. H.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2017A Novel Design of P-N Staggered Face-tunneling TFET Targeting for Low Power and Appropriate Performance ApplicationsHsieh, E. R.; Fan, Y. C.; Chang, K. Y.; Liu, C. H.; Chien, C. H.; Chung, Steve S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2014The Observation of BTI-induced RTN Traps in Inversion and Accumulation Modes on HfO2 High-k Metal Gate 28nm CMOS DevicesWu, P. C.; Hsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Chang, K. Y.; Liu, C. H.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2019Sub-ns Access Sub-mW/GHz 32 Kb SRAM with 0.45 V Cross-Point-5T Cell and Built-in Y_LineHe, C. Y.; Tang, K. H.; Chen, T. S.; Chang, K. Y.; Lin, C. H.; Sato, K.; Jou, S. J.; Chen, P. H.; Chen, H. M.; Rong, B. D.; Itoh, K.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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