瀏覽 的方式： 作者 Chang, Po Chun
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| 公開日期 | 標題 | 作者 |
| 八月-2016 | Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors | Quang Ho Luc; Cheng, Shou Po; Chang, Po Chun; Huy Binh Do; Chen, Jin Han; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 16-十月-2017 | Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application | Hsiao, Chih Jen; Kakkerla, Ramesh Kumar; Chang, Po Chun; Lumbantoruan, Franky Juanda; Lee, Tsu Ting; Lin, Yueh Chin; Chang, Shoou Jinn; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology |
