Browsing by Author Chang, Ru-Wei
Showing results 1 to 4 of 4
| Issue Date | Title | Author(s) |
| 1-Oct-2015 | Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layer | Chiu, Yung-Yueh; Yang, Bo-Jun; Li, Fu-Hai; Chang, Ru-Wei; Sun, Wein-Town; Lo, Chun-Yuan; Hsu, Chia-Jung; Kuo, Chao-Wei; Shirota, Riichiro; 資訊工程學系; Department of Computer Science |
| 1-Apr-2011 | Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices | Li, Yiming; Lee, Kuo-Fu; Yiu, Chun-Yen; Chiu, Yung-Yueh; Chang, Ru-Wei; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering |
| 1-Apr-2013 | Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme | Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro; 傳播研究所; 電機資訊學士班; Institute of Communication Studies; Undergraduate Honors Program of Electrical Engineering and Computer Science |
| 2013 | 探討P 型 SONOS 快閃記憶體元件抹寫週期忍耐度 之研究 | 張如薇; Chang, Ru-Wei; 白田理一郎; Shirota, Riichiro; 電信工程研究所 |
