| 公開日期 | 標題 | 作者 |
| 2005 | Direct experimental evidence of the hole capture by resonant levels in boron doped silicon | Yen, ST; Tulupenko, V; Cheng, ES; Dalakyan, A; Lee, CP; Chao, KA; Belykh, V; Abramov, A; Ryzhkov, V; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-三月-2005 | Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures | Zakharova, A; Yen, ST; Nilsson, K; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-2004 | Evidence for capture of holes into resonant states in boron-doped silicon | Yen, ST; Tulupenko, VN; Cheng, ES; Chung, PK; Lee, CP; Dalakyan, AT; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-五月-2003 | Growth of high-quality Ge epitaxial layers on Si(100) | Luo, GL; Yang, TH; Chang, EY; Chang, CY; Chao, KA; 材料科學與工程學系; 電子工程學系及電子研究所; 電子與資訊研究中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Microelectronics and Information Systems Research Center |
| 15-十二月-2001 | Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells | Zakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-三月-2004 | Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells | Zakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 7-七月-2004 | A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields | Lapushkin, I; Zakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-2005 | Six-band k center dot p calculation of spin-dependent interband tunneling in strained broken-gap heterostructures under a quantizing magnetic field | Zakharova, A; Nilsson, K; Chao, KA; Yen, ST; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 30-九月-2005 | Spin Hall effect on edge magnetization and electric conductance of a 2D semiconductor strip | Mal'shukov, AG; Wang, LY; Chu, CS; Chao, KA; 電子物理學系; Department of Electrophysics |
| 1-三月-2006 | Spin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc current | Zakharova, A; Lapushkin, I; Nilsson, K; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十二月-2004 | Spin relaxation dynamics of quasiclassical electrons in ballistic quantum dots with strong spin-orbit coupling | Chang, CH; Mal'shukov, AG; Chao, KA; 物理研究所; Institute of Physics |
| 1-十二月-2003 | Spin-current generation and detection in the presence of an ac gate | Mal'shukov, AG; Tang, CS; Chu, CS; Chao, KA; 電子物理學系; Department of Electrophysics |
| 2-九月-2005 | Strain-induced coupling of spin current to nanomechanical oscillations | Mal'shukov, AG; Tang, CS; Chu, CS; Chao, KA; 電子物理學系; Department of Electrophysics |
| 15-八月-2002 | Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells | Zakharova, A; Yen, ST; Chao, KA; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
