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Issue DateTitleAuthor(s)
1-Sep-2013Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devicesZhong, Chia-Wen; Tzeng, Wen-Hsien; Liu, Kou-Chen; Lin, Horng-Chih; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed OperationChen, Yu-Sheng; Wu, Tai-Yuan; Tzeng, Pei-Jer; Chen, Pang-Shiu; Lee, Heng-Yuan; Lin, Cha-Hsin; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2011Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristicsLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Huang, Jiun-Jie; Lee, Yun-Ju; Yeh, Ping-Hung; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2012Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin filmTzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 4 of 4