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Issue DateTitleAuthor(s)
2005An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTsChen, Han-Yu; Chen, Kun-Ming; Huang, Guo-Wei; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2020Coordinated and Simultaneous Formation of Paired Ge Quantum Dots by Thermal Oxidation of Designer Poly-SiGe Spacer StructuresChen, Han-Yu; Peng, Kang-Ping; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Impact of Body Bias on the High Frequency Performance of Partially Depleted SOI MOSFETsHuang, Guo-Wei; Chen, Kun-Ming; Chen, Han-Yu; Huang, Chi-Huan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008RF Noise Modeling of SiGe HBTs Using Four-Port De-embedding MethodChen, Kun-Ming; Chen, Han-Yu; Huang, Guo-Wei; Liao, Wen-Shiang; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2006Small-signal modeling of SiGeHBTs using direct parameter-extraction methodChen, Han-Yu; Chen, Kun-Ming; Huang, Guo-Wei; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 5 of 5