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Showing results 1 to 20 of 31  next >
Issue DateTitleAuthor(s)
30-Sep-2002Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistorsChen, KM; Huang, GW; Chiu, DY; Huang, HJ; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdownHuang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Computation of noise parameters using genetic algorithmsChen, HY; Chen, KM; Huang, GW; Cho, MH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2005Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stressChen, KM; Hu, HH; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxyChen, KM; Huang, HJ; Chang, CY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2001Electrical and compositional properties of co-silicided shallow p(+)-n junction using Si-capped/boron-doped Si1-xGex layer deposited by UHVCMEHuang, HJ; Chen, KM; Chang, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2001Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxyHuang, HJ; Chen, KM; Chang, CY; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2005Extraction of substrate parameters for RF MOSFETs based on four-port measurementWu, SD; Huang, GW; Chen, KM; Chang, CY; Tseng, HC; Hsu, TL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2004Hot-carrier effects on power characteristics of SiGeHBTsHuang, SY; Chen, KM; Huang, GW; Tseng, HC; Hsu, TL; Chang, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2005Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsHuang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsHuang, SY; Chen, KM; Huang, GW; Hsu, TL; Tseng, HC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Impact of hot carrier stress on RF power characteristics of MOSFETsHuang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; Liang, V; Tseng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
5-Mar-2005An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBTChen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2000Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structureHuang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2001Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drainHuang, HJ; Chen, KM; Huang, TY; Chao, TS; Huang, GW; Chien, CH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2006An improved parameter-extraction method of SiGe HBTs' substrate networkChen, HY; Chen, KM; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Layout design of high-quality SOI varactorChen, HY; Chen, KM; Huang, GW; Huang, CH; Yang, TH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2005Linearity and power characteristics of SiGeHBTs at high temperatures for RF applicationsChen, KM; Peng, AS; Huang, GW; Chen, HY; Huang, SY; Chang, CY; Tseng, HC; Hsu, TL; Liang, V; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1997Low temperature epitaxy of Si and Si1-xGex by utrahigh vacuum-chemical molecular epitaxyHuang, GW; Chen, LP; Chou, CT; Chen, KM; Tseng, HC; Tasi, WC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2004Low-frequency noise in partially depleted SOI MOSFETs operating from linear region to saturation region at various temperaturesChen, KM; Hu, HH; Huang, GW; Yeh, WK; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 31  next >