| 公開日期 | 標題 | 作者 |
| 1-二月-1996 | Antenna charging effects on the electrical characteristics of polysilicon gate during electron cyclotron resonance etching | Kang, TK; Ueng, SY; Dai, BT; Chen, LP; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十月-2001 | An automatic macro program for radio frequency MOSFET characteristics analysis | Su, CY; Chang, SJ; Chen, LP; Ho, YP; Huang, GW; Lin, DC; Tseng, BM; Lee, HY; Kuan, JF; Deng, YM; Wen, KA; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-二月-2000 | CMOS RFIC: Application to wireless transceiver design | Wen, KA; Wuen, WS; Huang, GW; Chen, LP; Chen, KY; Liu, SF; Chen, ZS; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-2000 | Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy | Chen, KM; Huang, HJ; Chang, CY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-二月-1998 | Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen | Chen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-二月-1998 | Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen | Chen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 20-七月-2000 | Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs | Su, CY; Chen, LP; Chang, SJ; Huang, GW; Ho, YP; Tseng, BM; Lin, DC; Lee, HY; Kuan, JF; Deng, YM; Chen, CL; Leu, LY; Wen, KA; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-六月-1997 | Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growth | Tseng, HC; Chang, CY; Pan, FM; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-六月-1997 | Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growth | Tseng, HC; Chang, CY; Pan, FM; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-三月-1996 | Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films | Chang, CY; Lin, HY; Lei, TF; Cheng, JY; Chen, LP; Dai, BT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-二月-2004 | High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxy | Wang, JS; Kovsh, AR; Hsiao, RS; Chen, LP; Chen, JF; Lay, TS; Chi, JY; 電子物理學系; Department of Electrophysics |
| 1-十二月-2000 | Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structure | Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-1997 | Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition | Tsai, WC; Chang, CY; Jung, TG; Chang, TC; Lin, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-1997 | Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition | Tsai, WC; Chang, CY; Jung, TG; Chang, TC; Lin, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-1997 | Low temperature epitaxy of Si and Si1-xGex by utrahigh vacuum-chemical molecular epitaxy | Huang, GW; Chen, LP; Chou, CT; Chen, KM; Tseng, HC; Tasi, WC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-1996 | Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors | Lin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-1996 | Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors | Lin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-五月-2002 | A macro model of silicon spiral inductor | Su, CY; Chen, LP; Chang, SJ; Tseng, BM; Lin, DC; Huang, GW; Ho, YP; Lee, HY; Kuan, JF; Wen, WY; Liou, P; Chen, CL; Leu, LY; Wen, KA; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-1996 | A novel technology to reduce the antenna charging effects during polysilicon gate electron-cyclotron-resonance etching | Cheng, HC; Kang, TK; Ku, TK; Dai, BT; Chen, LP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 11-三月-1996 | Phosphorus doping of Si and Si1-xGex grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4 | Chen, LP; Huang, GW; Chang, CY; 電控工程研究所; Institute of Electrical and Control Engineering |
