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Showing results 1 to 18 of 18
Issue DateTitleAuthor(s)
2012Advanced Metal-Gate/High-kappa CMOS with Small EOT and Better High Field MobilityChin, Albert; Chen, W. B.; Chen, P. C.; Wu, Y. H.; Chi, C. C.; Lee, Y. J.; Chang-Liao, K. S.; Kuan, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Characteristics of Cerium Oxide for Metal-Insulator-Metal CapacitorsCheng, C. H.; Hsu, H. H.; Chen, W. B.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2008Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositionsYang, H. J.; Cheng, C. F.; Chen, W. B.; Lin, S. H.; Yeh, F. S.; McAlister, Sean P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2009Flat band voltage control on low V(t) metal-gate/high-kappa CMOSFETs with small EOTChin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, C. C.; Li, M. -F.; Su, N. C.; Wang, S. J.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Jul-2009Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOTChin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, C. C.; Li, M. -F.; Su, N. C.; Wang, S. J.; 電子工程學系及電子研究所; 光電工程學系; 光電工程研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of EO Enginerring
1-Nov-2010Gate-First TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs Using Laser AnnealingChen, W. B.; Wu, C. H.; Shie, B. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2010Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs Using Laser AnnealingChen, W. B.; Wu, C. H.; Shie, B. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2010High Performance of Ge nMOSFETs Using SiO(2) Interfacial Layer and TiLaO Gate DielectricChen, W. B.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2010High Performance of Ge nMOSFETs Using SiO2 Interfacial Layer and TiLaO Gate DielectricChen, W. B.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2011High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thicknessChen, W. B.; Cheng, C. H.; Lin, C. W.; Chen, P. C.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2010High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO(3) Gate DielectricsChen, W. B.; Cheng, C. H.; Chin, Albert; 光電學院; 電子工程學系及電子研究所; College of Photonics; Department of Electronics Engineering and Institute of Electronics
1-Dec-2010High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO3 Gate DielectricsChen, W. B.; Cheng, C. H.; Chin, Albert; 光電學院; 電子工程學系及電子研究所; College of Photonics; Department of Electronics Engineering and Institute of Electronics
1-Apr-2011Higher Gate Capacitance Ge n-MOSFETs Using Laser AnnealingChen, W. B.; Shie, B. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Higher kappa Metal-Gate/High-kappa/Ge n-MOSFETs with < 1 nm EOT Using Laser AnnealingChen, W. B.; Shie, B. S.; Chin, Albert; Hsu, K. C.; Chi, C. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2008Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriersLin, S. H.; Yang, H. J.; Chen, W. B.; Yeh, F. S.; McAlister, Sean P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
23-Nov-2009Interfacial layer dependence on device property of high-kappa TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thicknessChen, W. B.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2009Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow JunctionsLin, S. H.; Cheng, C. H.; Chen, W. B.; Yeh, F. S.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-Sep-2009Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOTLin, S. H.; Cheng, C. H.; Chen, W. B.; Yeh, F. S.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 18 of 18