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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
1-Nov-2009Catalyst-free highly vertically aligned ZnO nanoneedle arrays grown by plasma-assisted molecular beam epitaxyWang, J. S.; Yang, C. S.; Chen, P. I.; Su, C. F.; Chen, W. J.; Chiu, K. C.; Chou, W. C.; 電子物理學系; Department of Electrophysics
1-Aug-2008High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees CCheng, C. H.; Lin, S. H.; Jhou, K. Y.; Chen, W. J.; Chou, C. P.; Yeh, F. S.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
2006High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function differenceWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Chen, W. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 奈米科技中心; Center for Nanoscience and Technology
1-Oct-2007A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retentionYang, H. J.; Chin, Albert; Chen, W. J.; Cheng, C. F.; Huang, W. L.; Hsieh, I. J.; McAlister, S. P.; 奈米科技中心; Center for Nanoscience and Technology
1-Sep-2006RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance densityHuang, C. C.; Chiang, K. C.; Kao, H. L.; Chin, Albert; Chen, W. J.; 奈米科技中心; Center for Nanoscience and Technology
1-Oct-2012Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC ApplicationsYang, C. L.; Tsai, C. H.; Li, C. I.; Tzeng, C. Y.; Lin, G. P.; Chen, W. J.; Chin, Y. L.; Liao, C. I.; Chan, M.; Wu, J. Y.; Hsieh, E. R.; Guo, B. N.; Lu, S.; Colombeau, B.; Chung, S. S.; Chen, I. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Very high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applicationsChiang, K. C.; Lin, J. W.; Pan, H. C.; Hsiao, C. N.; Chen, W. J.; Kao, H. L.; Hsieh, I. J.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 7 of 7