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Issue DateTitleAuthor(s)
20043D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOSYu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL; 交大名義發表; National Chiao Tung University
1-Jul-2000The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bondingWu, YH; Huang, CH; Chen, WJ; Lin, CN; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2002Characterization of Si/SiGe heterostructures on Si formed by solid phase reactionHuang, CH; Chin, A; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Device level characterization for energy bandgap of strain-relaxed SiGe and oxide/SiGe barrier heightHuang, CH; Yu, DS; Chin, A; Chen, WJ; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-Jan-1999The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on SiWu, YH; Chen, WJ; Chin, A; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1998The effect of native oxide on thin gate oxide integrityChin, A; Lin, BC; Chen, WJ; Lin, YB; Thai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstromWu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Face recognition and tracking for human-robot interactionSong, KT; Chen, WJ; 電控工程研究所; Institute of Electrical and Control Engineering
1-Aug-2002Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/SiLin, CY; Chen, WJ; Lai, CH; Chin, A; Liu, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2003Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETsYu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETsHuang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High hole mobility of Al2O3 mosfets on dislocation free Ge-on-insulator wafersChin, A; Yu, DS; Wu, CH; Huang, CH; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-Sep-1996High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees CChin, A; Lin, BC; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-Sep-1996High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees CChin, A; Lin, BC; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstromChin, A; Wu, YH; Chen, SB; Liao, CC; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2005High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applicationsChiang, KC; Huang, CC; Chin, A; Chen, WJ; McAlister, SP; Chiu, HF; Chen, JR; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology
1-May-2000High-quality thermal oxide grown on high-temperature-formed SiGeWu, YH; Chen, SB; Chin, A; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1999Improved electrical characteristics of CoSi2 using HF-vapor pretreatmentWu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1999Improved electrical characteristics of CoSi2 using HF-vapor pretreatmentWu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 物理研究所; 電子工程學系及電子研究所; Institute of Physics; Department of Electronics Engineering and Institute of Electronics
1-May-1999Improved electrical characteristics of CoSi2 using HF-vapor pretreatmentWu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 36  next >