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Issue DateTitleAuthor(s)
2004Performance of AlGaN/GaN heterostrucrure FETs over temperaturesLee, CC; Shih, CF; Lee, CP; Tu, RC; Chuo, CC; Chi, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-Jan-2006Quaternary AlInGaN multiple quantum well 368 nm light-emitting diodeWang, TC; Kuo, HC; Lee, ZH; Chuo, CC; Tsai, MY; Tsai, CE; Lee, TD; Lu, TC; Chi, J; 光電工程學系; Department of Photonics
1-Jun-2004Temperature-dependent electron transport properties of AlGaN/GaN heterostructuresLee, CC; Shih, CF; Lee, CP; Tu, RC; Chuo, CC; Chi, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-May-2006Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxyLai, FI; Kuo, SY; Wang, JS; Hsiao, RS; Kuo, HC; Chi, J; Wang, SC; Wang, HS; Liang, CT; Chen, YF; 光電工程學系; Department of Photonics
15-Feb-2004Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor depositionTu, RC; Tun, CJ; Chuo, CC; Lee, BC; Tsai, CE; Wang, TC; Chi, J; Lee, CP; Chi, GC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 5 of 5