瀏覽 的方式： 作者 Chi, MH
顯示 1 到 2 筆資料，總共 2 筆
| 公開日期 | 標題 | 作者 |
| 1-五月-2006 | A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient | Wang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2005 | Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs | Chan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
