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| Issue Date | Title | Author(s) |
| 2005 | 2-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate | Lin, YH; Chien, CH; Chou, TH; Chao, TS; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-May-2006 | Annealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memory | Lin, YH; Chien, CH; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-Aug-2005 | Bis(2,2-diphenylvinyl)spirobifluorene: An efficient and stable blue emitter for electroluminescence applications | Wu, FI; Shu, CF; Wang, TT; Diau, EWG; Chien, CH; Chuen, CH; Tao, Y; 應用化學系; Department of Applied Chemistry |
| 1999 | Breakdown characteristics of ultra-thin gate oxides caused by plasma charging | Chen, CC; Lin, HC; Chang, CY; Chien, CH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 18-Oct-2004 | The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode | Lu, WT; Lin, PC; Huang, TY; Chien, CH; Yang, MJ; Huang, IJ; Lehnen, P; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Apr-2005 | Characteristics of the inter-poly Al(2)O(3) dielectrics on NH(3)-nitrided bottom poly-si for next-generation flash memories | Chen, YY; Chien, CH; Lou, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Apr-2005 | Characteristics of the inter-poly Al2O3 dielectrics on NH3-nitrided bottom poly-si for next-generation flash memories | Chen, YY; Chien, CH; Lou, JC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-Aug-1996 | Characterization of antenna effect by nondestructive gate current measurement | Lin, HC; Chien, CH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-Aug-1996 | Characterization of antenna effect by nondestructive gate current measurement | Lin, HC; Chien, CH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Dec-1999 | The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs) | Chao, TS; Chang, SJ; Chien, CH; Lin, HC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2005 | Deep sub-micron strained Si0.85Ge0.15 channel p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultra-thin N2O-annealed SiN gate dielectric | Chen, CW; Chien, CH; Chen, YC; Hsu, SL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Dec-2001 | The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition | Yang, MJ; Chien, CH; Leu, CC; Zhang, RJ; Wu, SC; Huang, TY; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2005 | Effects of low-temperature NH3 treatment on the characteristics of HfO2/SiO2 gate stack | Lu, WT; Chien, CH; Huang, IJ; Yang, MJ; Lehnen, P; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Feb-2000 | Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides | Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2006 | Effects of postdeposition annealing on the characteristics of HfOxNy dielectrics on germanium and silicon substrates | Cheng, CC; Chien, CH; Chen, CW; Hsu, SL; Yang, CH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-Jan-1999 | The effects of shallow germanium halo doping on N-channel metal oxide semiconductor field effect transistors | Wang, MF; Chien, CH; Chao, TS; Lin, HC; Jong, FC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Nov-2004 | Efficient sub-nanosecond intracavity optical parametric oscillator pumped with a passively Q-switched Nd : GdVO4 laser | Chen, YF; Chen, SW; Tsai, LY; Chen, YC; Chien, CH; 電子物理學系; Department of Electrophysics |
| 1-Sep-2001 | Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering | Pan, TM; Chien, CH; Lei, TF; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Jan-2005 | Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments | Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Jan-2005 | Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatments | Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
