瀏覽 的方式： 作者 Chien, Hung-Pin
顯示 1 到 5 筆資料，總共 5 筆
| 公開日期 | 標題 | 作者 |
| 1-一月-2014 | Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation | Chen, Che-Wei; Tzeng, Ju-Yuan; Chung, Cheng-Ting; Chien, Hung-Pin; Chien, Chao-Hsin; Luo, Guang-Li; Wang, Pei-Yu; Tsui, Bing-Yue; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 七月-2016 | Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs | Hsu, Chung-Chun; Chi, Wei-Chun; Tsai, Yi-He; Chou, Chen-Han; Chen, Che-Wei; Chien, Hung-Pin; Chuang, Shang-Shiun; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-2016 | High Performance Ge Schottky PMOSFETs with Ternary-Phase Alloy | Hsu, Chung-Chun; Chi, Wei-Chun; Chou, Chen-Han; Chen, Che-Wei; Chien, Hung-Pin; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-2014 | High-Performance Germanium p- and n-MOSFETs With NiGe Source/Drain | Chen, Che-Wei; Tzeng, Ju-Yuan; Chung, Cheng-Ting; Chien, Hung-Pin; Chien, Chao-Hsin; Luo, Guang-Li; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2013 | 利用源極與汲極工程改善鍺通道金氧半場效電晶體之特性 | 錢弘彬; Chien, Hung-Pin; 簡昭欣; Chien, Chao-Hsin; 電子工程學系 電子研究所 |
