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Issue DateTitleAuthor(s)
1-Nov-2019Atomic and Electronic Structures of a-SiNx:HGritsenko, V. A.; Kruchinin, V. N.; Prosvirin, I. P.; Novikov, Yu N.; Chin, A.; Volodin, V. A.; 交大名義發表; National Chiao Tung University
15-Aug-2011Bipolar conductivity in amorphous HfO(2)Islamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
15-Aug-2011Bipolar conductivity in amorphous HfO2Islamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
1-Jan-1970Bipolar conductivity in nanocrystallized TiO2Islamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
1-Mar-2007Calibration 90 nm node RF mosfets, including stress degradationKao, H. L.; Kao, C. H.; Chin, A.; Liao, C. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-Mar-2015Charge transport in amorphous Hf0.5Zr0.5O2Islamov, D. R.; Perevalov, T. V.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
16-Dec-2019Charge transport mechanism in SiNx-based memristorGismatulin, A. A.; Gritsenko, V. A.; Yen, T-J; Chin, A.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-Jan-2019Charge transport mechanism of high-resistive state in RRAM based on SiOxGismatulin, A. A.; Kruchinin, V. N.; Gritsenko, V. A.; Prosvirin, I. P.; Yen, T. -J.; Chin, A.; 交大名義發表; National Chiao Tung University
2-Dec-2013Evolution of the conductivity type in germania by varying the stoichiometryIslamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
1-Sep-2013Gate-first n-MOSFET with a sub-0.6-nm EOT gate stackCheng, C. H.; Chou, K. I.; Chin, A.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2018Local Oscillations of Silicon-Silicon Bonds in Silicon NitrideVolodin, V. A.; Gritsenko, V. A.; Chin, A.; 交大名義發表; National Chiao Tung University
11-Jun-2012Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between trapsShaposhnikov, A. V.; Perevalov, T. V.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2019Mechanism of stress induced leakage current in Si3N4Gritsenko, V. A.; Gismatulin, A. A.; Baraban, A. P.; Chin, A.; 交大名義發表; National Chiao Tung University
10-Jun-2019Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys filmsVolodin, V. A.; Kamaev, G. N.; Gritsenko, V. A.; Gismatulin, A. A.; Chin, A.; Vergnat, M.; 交大名義發表; National Chiao Tung University
1-Mar-2019Multiphonon trap ionization transport in nonstoichiometric SiNxGritsenko, V. A.; Gismatulin, A. A.; Chin, A.; 交大名義發表; National Chiao Tung University
1-Nov-2015Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAMKruchinin, V. N.; Aliev, V. Sh.; PerevaIov, T. V.; Islamov, D. R.; Gritsenko, V. A.; Prosvirin, I. P.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
1-Sep-2019Nanoscale potential fluctuations and electron percolation in silicon oxide (SiOx, x=1.4, 1.6)Gritsenko, V. A.; Novikov, Yu N.; Chin, A.; 交大名義發表; National Chiao Tung University
1-Dec-2014Origin of traps and charge transport mechanism in hafniaIslamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
29-Dec-2014Percolation conductivity in hafnium sub-oxidesIslamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.; 交大名義發表; National Chiao Tung University
2011The Reliability Study and Device Modeling for p-HEMT Microwave Power TransistorsLiu, S. L.; Chang, H. M.; Chang, T.; Kao, H. L.; Cheng, C. H.; Chin, A.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 23  next >