瀏覽 的方式： 作者 Chiu, Te-Hsin
顯示 1 到 4 筆資料，總共 4 筆
| 公開日期 | 標題 | 作者 |
| 2008 | Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement | Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; 電子物理學系; Department of Electrophysics |
| 2007 | Performance enhancement for strained HfO(2) nMOSFET with contact etch stop layer (CESL) under pulsed-IV measurement | Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; Ho, Yi-Hsun; 電子物理學系; Department of Electrophysics |
| 1-十二月-2008 | Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained HfO(2) nMOSFET | Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; 電子物理學系; Department of Electrophysics |
| 1-十二月-2008 | Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained HfO2 nMOSFET | Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics |
