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Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
1999Atomic force microscope study of GaN films grown by hydride vapor phase epitaxyFang, HM; Wang, YK; Tsai, RY; Chu, CF; Wang, SC; 光電工程學系; Department of Photonics
1-May-2001Beryllium-implanted P-type GaN with high carrier concentrationYu, CC; Chu, CF; Tsai, JY; Lin, CF; Lan, WH; Chiang, CI; Wang, SC; 光電工程學系; Department of Photonics
2005Brightness enhancement of ITO/GaN LEDs by self-aligned micro-net structuresChang, KM; Chu, JY; Cheng, CC; Chu, CF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structuresLin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC; 光電工程學系; Department of Photonics
15-Feb-2003Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-offChu, CF; Yu, CC; Cheng, HC; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics
2005Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-offChu, JT; Liang, WD; Kao, CC; Huang, HW; Chu, CF; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
25-Mar-2004Effect of rapid thermal annealing on beryllium implanted p-type GaNHuang, HW; Kao, CC; Tsai, JY; Yu, CC; Chu, CF; Lee, JY; Kuo, SY; Lin, CF; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-Nov-2005Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-offChu, JT; Kao, CC; Huang, HW; Liang, WD; Chu, CF; Lu, TC; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
15-Aug-2002Electrical and optical properties of beryllium-implanted Mg-doped GaNYu, CC; Chu, CF; Tsai, JY; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics
1-Apr-2005Fabrication of large-area GaN-based light-emitting diodes on Cu substrateChu, JT; Huang, HW; Kao, CC; Liang, WD; Lai, FI; Chu, CF; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
2004Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-offChu, JT; Kuo, HC; Kao, CC; Huang, HW; Chu, CF; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics
15-Aug-2002Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etchingYu, CC; Chu, CF; Tsai, JY; Huang, HW; Hsueh, TH; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics
22-May-2001High etching rate of GaN films by KrF excimer laserChu, CF; Lee, CK; Yu, CC; Wang, YK; Tasi, JY; Yang, CR; Wang, SC; 光電工程學系; Department of Photonics
22-May-2001Investigation of beryllium implanted P-type GaNYu, CC; Chu, CF; Tsai, JY; Wang, SC; 光電工程學系; Department of Photonics
2004Large emitting area GaN based light emitting diode fabricated on conducting copper substratesChu, JT; Liang, WD; Chu, CF; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
20-Nov-2000Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallizationChu, CF; Yu, CC; Wang, YK; Tsai, JY; Lai, FI; Wang, SC; 光電工程學系; Department of Photonics
15-Apr-2004Study of GaN light-emitting diodes fabricated by laser lift-off techniqueChu, CF; Lai, FI; Chu, JT; Yu, CC; Lin, CF; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
Showing results 1 to 17 of 17