Skip navigation
Browse
Items
Issue Date
Author
Title
Subject
Researchers
English
繁體
简体
You are Here:
National Chiao Tung University Institutional Repository
Browsing by Author Diaz, CH
Jump to:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
or enter first few letters:
Sort by:
title
issue date
submit date
In order:
Ascending
Descending
Results/Page
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Authors/Record:
All
1
5
10
15
20
25
30
35
40
45
50
Showing results 1 to 6 of 6
Issue Date
Title
Author(s)
1-Jan-2002
Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices
Wang, HCH
;
Wang, CC
;
Diaz, CH
;
Liew, BK
;
Sun, JYC
;
Wang, TH
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-Dec-2000
Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology
Wang, HCH
;
Diaz, CH
;
Liew, BK
;
Sun, JYC
;
Wang, TH
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-Feb-2001
Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction
Wang, HCH
;
Wang, CC
;
Chang, CS
;
Wang, TH
;
Griffin, PB
;
Diaz, CH
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-Jan-2005
Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
Sheu, YM
;
Yang, SJ
;
Wang, CC
;
Chang, CS
;
Huang, LP
;
Huang, TY
;
Chen, MJ
;
Diaz, CH
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-Sep-2004
Separation of channel backscattering coefficients in nanoscale MOSFETs
Chen, MJ
;
Huang, HT
;
Chou, YC
;
Chen, RT
;
Tseng, YT
;
Chen, PN
;
Diaz, CH
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2002
Temperature dependent channel backscattering coefficients in nanoscale MOSFETs
Chen, MJ
;
Huang, HT
;
Huang, KC
;
Chen, PN
;
Chang, CS
;
Diaz, CH
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics