瀏覽 的方式： 作者 Fahn, FJ
顯示 1 到 2 筆資料，總共 2 筆
| 公開日期 | 標題 | 作者 |
| 1-十二月-1996 | Comprehensive study of plasma pretreatment process for thin gate oxide (<10 nm) fabricated by electron cyclotron resonance plasma oxidation | Chang, KM; Li, CH; Fahn, FJ; Yeh, TH; Wang, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-1997 | The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidation | Chang, KM; Li, CH; Fahn, FJ; Tsai, JY; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
