瀏覽 的方式： 作者 Ge, CH
顯示 1 到 3 筆資料，總共 3 筆
| 公開日期 | 標題 | 作者 |
| 2005 | Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain | Lin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-2005 | Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs | Lin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2005 | The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs | Lin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
