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瀏覽 的方式: 作者 Gismatulin, A. A.
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16-十二月-2019
Charge transport mechanism in SiNx-based memristor
Gismatulin, A. A.
;
Gritsenko, V. A.
;
Yen, T-J
;
Chin, A.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
21-Jan-2019
Charge transport mechanism of high-resistive state in RRAM based on SiOx
Gismatulin, A. A.
;
Kruchinin, V. N.
;
Gritsenko, V. A.
;
Prosvirin, I. P.
;
Yen, T. -J.
;
Chin, A.
;
交大名義發表
;
National Chiao Tung University
1-Jul-2019
Mechanism of stress induced leakage current in Si3N4
Gritsenko, V. A.
;
Gismatulin, A. A.
;
Baraban, A. P.
;
Chin, A.
;
交大名義發表
;
National Chiao Tung University
10-Jun-2019
Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films
Volodin, V. A.
;
Kamaev, G. N.
;
Gritsenko, V. A.
;
Gismatulin, A. A.
;
Chin, A.
;
Vergnat, M.
;
交大名義發表
;
National Chiao Tung University
1-Mar-2019
Multiphonon trap ionization transport in nonstoichiometric SiNx
Gritsenko, V. A.
;
Gismatulin, A. A.
;
Chin, A.
;
交大名義發表
;
National Chiao Tung University