瀏覽 的方式： 作者 Goodman, Gary
顯示 1 到 4 筆資料，總共 4 筆
| 公開日期 | 標題 | 作者 |
| 1-一月-2018 | Boosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C Implantation | Borland, John; Chaung, Shang-Shiun; Tseng, Tseung-Yuen; Lee, Yao-Jen; Joshi, Abhijeet; Basol, Bulent; Kuroi, Takashi; Goodman, Gary; Khapochkima, Nadya; Buyuklimanli, Temel; 交大名義發表; National Chiao Tung University |
| 1-一月-2018 | Boosting Ge-epi P-well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing | Borland, John; Chaung, Shang-Shuin; Tseng, Tseung-Yuen; Joshi, Abhij Eet; Basol, Bulent; Lee, Yao-Jen; Kuroi, Takashi; Tabata, Toshiyuki; Huet, Karim; Goodman, Gary; Khapochkina, Nadya; Buyuklimanli, Temel; 交大名義發表; 電機工程學系; National Chiao Tung University; Department of Electrical and Computer Engineering |
| 1-一月-2019 | Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering | Borland, John; Chaung, Shang-Shuin; Tseng, Tseung-Yuen; Joshi, Abhijeet; Basol, Bulent; Lee, Yao-Jen; Kuroi, Takashi; Goodman, Gary; Khapochkina, Nadya; Buyuklimanli, Temel; 交大名義發表; National Chiao Tung University |
| 1-一月-2017 | Solid Solubility Limited Dopant Activation of Group III Dopants (B, Ga & In) in Ge Targeting sub-7nm Node Low p plus Contact Resistance | Borland, John; Lee, Yao-Jen; Chuang, Shang-Shiun; Tseng, Tseung-Yuen; Liu, Chee-Wee; Huet, Karim; Goodman, Gary; Marino, John; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
