| 公開日期 | 標題 | 作者 |
| 6-十一月-2000 | Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots | Wang, JS; Chen, JF; Huang, JL; Wang, PY; Guo, XJ; 電子物理學系; Department of Electrophysics |
| 1-九月-2005 | Effect of substrate orientation on arsenic precipitation in low-temperature-grown GaAs | Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-十月-2005 | Effects of annealing on magnetic properties of new ferromagnetic semiconductor (In, Al, Mn) As | Chen, YF; Lee, WN; Huang, JH; Chin, TS; Guo, XJ; Ku, HC; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-十一月-2005 | Effects of doping type and concentration on precipitation of nanometer arsenic clusters in low-temperature-grown GaAs | Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; 材料科學與工程學系; Department of Materials Science and Engineering |
| 11-一月-2006 | (In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substrates | Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; Chin, TS; Ku, HC; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-四月-2006 | MBE growth and structural and magnetic properties of (In1-gamma Al gamma)(1-x)MnxAs-diluted magnetic semiconductors | Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; Ku, HC; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-十一月-1997 | The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy | Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY; 電子物理學系; Department of Electrophysics |
| 1-十一月-1997 | The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy | Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY; 電子物理學系; Department of Electrophysics |
| 1-二月-2000 | Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence | Chen, JF; Wang, PY; Wang, JS; Chen, NC; Guo, XJ; Chen, YF; 電子物理學系; Department of Electrophysics |
