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9-五月-19942-DIMENSIONAL ARSENIC PRECIPITATION BY IN DELTA-DOPING DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS OR ALGAASCHENG, TM; CHANG, CY; CHIN, A; HUANG, MF; HUANG, JH; 電控工程研究所; Institute of Electrical and Control Engineering
15-十一月-1994AS PRECIPITATE REDISTRIBUTION IN SI DELTA-DOPED LOW-TEMPERATURE GAASCHENG, TM; CHANG, CY; HUANG, JH; 電控工程研究所; Institute of Electrical and Control Engineering
1-八月-1993COLOR IN UNITED-STATES AND TAIWANESE INDUSTRIAL ADVERTISINGHUANG, JH; 交大名義發表; 管理科學系; National Chiao Tung University; Department of Management Science
1-二月-1995CONTROL OF AS PRECIPITATION IN LOW-TEMPERATURE GAAS BY ELECTRONIC AND ISOELECTRONIC DELTA-DOPINGCHENG, TM; CHANG, CY; HUANG, JH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1995FORMATION AND CHARACTERIZATION OF GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE-TEMPERATURECHENG, TM; CHANG, CY; HUANG, JH; 電控工程研究所; Institute of Electrical and Control Engineering
27-六月-1994HIGH-RESOLUTION X-RAY CHARACTERIZATION OF LOW-TEMPERATURE GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXYCHENG, TM; CHANG, CY; CHANG, TC; HUANG, JH; HUANG, MF; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
17-四月-1995LUMINESCENCE OF LOW-TEMPERATURE GAAS IN A GAAS/IN0.2GA0.8AS MULTIPLE-QUANTUM-WELL STRUCTURECHENG, TM; CHANG, CY; HUANG, JH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-三月-1994STRONG ACCUMULATION OF AS PRECIPITATES IN LOW-TEMPERATURE INGAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXYCHENG, TM; CHIN, A; CHANG, CY; HUANG, MF; HSIEH, KY; HUANG, JH; 電控工程研究所; Institute of Electrical and Control Engineering
2-一月-1995SUBSTRATE ORIENTATION DEPENDENCE OF LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXYCHENG, TM; CHANG, CY; HUANG, JH; 電控工程研究所; Institute of Electrical and Control Engineering
顯示 1 到 9 筆資料，總共 9 筆