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Issue DateTitleAuthor(s)
2004Low leakage reliability characterization methodology for advanced CMOS with gate oxide in the 1nm rangeChung, SS; Feng, HJ; Hsieh, YS; Liu, A; Lin, WM; Chen, DF; Ho, JH; Huang, KT; Yang, CK; Cheng, O; Sheng, YC; Wu, DY; Shiau, WT; Chien, SC; Liao, K; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devicesChung, SS; Liu, YR; Yeh, CF; Wu, SR; Lai, CS; Chang, TY; Ho, JH; Liu, CY; Huang, CT; Tsai, CT; Shiau, WT; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 2 of 2