瀏覽 的方式： 作者 Hsia, LC
顯示 1 到 2 筆資料，總共 2 筆
| 公開日期 | 標題 | 作者 |
| 2000 | Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate bias | Chiang, LP; Tsai, CW; Wang, T; Liu, UC; Wang, MC; Hsia, LC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2000 | Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs | Tsai, CW; Gu, SH; Chiang, LP; Wang, TH; Liu, YC; Huang, LS; Wang, MC; Hsia, LC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
