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公開日期標題作者
2010High-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface TreatmentCheng, C. H.; Hsu, H. H.; Hsieh, I. J.; Deng, C. K.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Low threshold voltage and high drive current poly-silicon thin film transistors using Ytterbium metal gate and LaAlO3 dielectricHung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Lin, J. W.; Hsieh, I. J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2007A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retentionYang, H. J.; Chin, Albert; Chen, W. J.; Cheng, C. F.; Huang, W. L.; Hsieh, I. J.; McAlister, S. P.; 奈米科技中心; Center for Nanoscience and Technology
2007Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitorsChiang, K. C.; Huang, C. C.; Pan, H. C.; Hsiao, C. N.; Lin, J. W.; Hsieh, I. J.; Cheng, C. H.; Chou, C. P.; Chin, A.; Hwang, H. L.; McAlister, S. P.; 機械工程學系; 奈米科技中心; Department of Mechanical Engineering; Center for Nanoscience and Technology
2007Very high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applicationsChiang, K. C.; Lin, J. W.; Pan, H. C.; Hsiao, C. N.; Chen, W. J.; Kao, H. L.; Hsieh, I. J.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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