| Issue Date | Title | Author(s) |
| 1-四月-2008 | GaN p-i-n photodetectors with an LT-GaN interlayer | Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C.; 電子物理學系; Department of Electrophysics |
| 1-Feb-2007 | GaN-based light-emitting diodes prepared on vicinal sapphire substrates | Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Cheng, Y. C.; Lin, W. J.; 電子物理學系; Department of Electrophysics |
| 1-Jun-2018 | Genetically closely related azole-resistant Candida tropicalis in environments can be a threat to healthcare | Zhou, Z. L.; Tsai, J. N.; Tseng, M. N.; Liu, H. L.; Lin, C. C.; Chen, K. T.; Huang, K. C.; Huang, C. H.; Chu, W. L.; Chen, Y. Z.; Chen, F. C.; Hsu, M. K.; Wang, S. C.; Peng, H. L.; Yang, Y. L.; Chen, Y. C.; Lo, H. J.; 交大名義發表; National Chiao Tung University |
| 1-Aug-2008 | High light output intensity of titanium dioxide textured light-emitting diodes | Huang, K. C.; Lan, W. H.; Huang, K. F.; Lin, J. C.; Cheng, Y. C.; Lin, W. J.; Pan, S. M.; 電子物理學系; Department of Electrophysics |
| 22-Oct-2007 | High responsivity of GaN p-i-n photodiode by using low-temperature interlayer | Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Huang, C. Y.; Lai, W. C.; Lin, W. J.; Cheng, Y. C.; 電子物理學系; Department of Electrophysics |
| 1-Jan-2008 | Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surface | Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Cheng, Y. C.; Lin, W. J.; 電子物理學系; Department of Electrophysics |
| 2009 | In0.11Ga0.89N-based p-i-n photodetector | Su, Y. K.; Lee, H. C.; Lin, J. C.; Huang, K. C.; Lin, W. J.; Li, T. C.; Chang, K. J.; 電子物理學系; Department of Electrophysics |
| 1-Jul-2008 | Low dark current GaN p-i-n photodetectors with a low-temperature AIN interlayer | Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Chen, W. R.; Huang, K. C.; Cheng, Y. C.; Lin, W. J.; 電子物理學系; Department of Electrophysics |
