| 公開日期 | 標題 | 作者 |
| 1-十一月-1998 | Broadly tunable self-starting passively mode-locked Ti : sapphire laser with triple-strained quantum-well saturable Bragg reflector | Shieh, JM; Huang, TC; Huang, KF; Wang, CL; Pan, CL; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics |
| 1-十一月-1998 | Broadly tunable self-starting passively mode-locked Ti : sapphire laser with triple-strained quantum-well saturable Bragg reflector | Shieh, JM; Huang, TC; Huang, KF; Wang, CL; Pan, CL; 電子物理學系; 光電工程研究所; Department of Electrophysics; Institute of EO Enginerring |
| 1-十一月-2004 | Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n(+) type doped GaAs | Chen, YS; Wu, KS; Wang, DP; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics |
| 18-一月-1999 | Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n(+)-type doped GaAs | Wang, DP; Wang, KR; Huang, KF; Huang, TC; Chu, AK; 電子物理學系; Department of Electrophysics |
| 1-四月-1999 | Effect of modulating field on photoreflectance simulated by electroreflectance | Chiou, SJ; Sung, YG; Wang, DP; Huang, KF; Huang, TC; Chu, AK; 電子物理學系; Department of Electrophysics |
| 1-一月-2002 | Effects of polarization on electroreflectance spectroscopy of surface-intrinsic n(+)-type doped GaAs | Sung, YG; Chiou, SJ; Wang, DP; Lu, YT; Huang, KF; Huang, TC; 交大名義發表; National Chiao Tung University |
| 1-一月-1998 | The effects of the magnitude of the modulation field on electroreflectance spectroscopy of undoped-n(+) type doped GaAs | Wang, DP; Huang, KM; Shen, TL; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics |
| 15-九月-1997 | Electroreflectance of surface-intrinsic- n(+)-type doped GaAs | Wang, DP; Huang, KM; Shen, TL; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics |
| 15-九月-1997 | Electroreflectance of surface-intrinsic- n(+)-type doped GaAs | Wang, DP; Huang, KM; Shen, TL; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics |
| 1-十二月-2003 | Electroreflectance of surface-intrinsic-n(+)-type-doped GaAs by using a large modulating field | Lin, YC; Wang, KQ; Wang, DP; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics |
| 1-四月-2002 | Evaluation of modulating field of photoreflectance of surface-intrinsic-n(+) type doped GaAs by using photoinduced voltage | Lee, WY; Chien, JY; Wang, DP; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics |
| 1998 | A new type of saturable Bragg reflector with record-low saturation fluence and broad tuning range | Shieh, JM; Huang, TC; Huang, KF; Wang, CL; Pan, CL; 光電工程學系; Department of Photonics |
| 29-十二月-1997 | Temperature dependence of Fermi level obtained by electroreflectance spectroscopy of undoped n(+)-type doped GaAs | Huang, KM; Wang, KL; Wang, DP; Huang, KF; Huang, TC; Chu, AK; 電子物理學系; Department of Electrophysics |
