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Showing results 1 to 3 of 3
Issue Date
Title
Author(s)
1-Mar-1995
EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS
LIN, CT
;
CHAO, CH
;
JUANG, MH
;
JAN, ST
;
CHOU, PF
;
CHENG, HC
;
奈米中心
;
Nano Facility Center
15-Sep-1994
FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS
LIN, CT
;
JUANG, MH
;
JAN, ST
;
CHOU, PF
;
CHENG, HC
;
奈米中心
;
Nano Facility Center
30-Aug-1993
THE PROCESS LIMITATION FOR FORMING TI SILICIDED SHALLOW JUNCTION BY BF(2)+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS AND SUBSEQUENT TI SILICIDATION
JUANG, MH
;
LIN, CT
;
JAN, ST
;
CHENG, HC
;
電控工程研究所
;
Institute of Electrical and Control Engineering
