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Issue DateTitleAuthor(s)
1-Dec-1992ACTIVATION MECHANISM OF IMPLANTED BORON IN A SI SUBSTRATEJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1992CHARACTERIZATION OF SILICIDED SHALLOW N+P JUNCTIONS FORMED BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATESJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Sep-1992CONVENTIONAL FURNACE AND RAPID THERMAL ANNEALING OF COBALT FILMS ON SI(111)JUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1995EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMSLIN, CT; CHAO, CH; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC; 奈米中心; Nano Facility Center
1-Feb-1992EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .1. THIN TITANIUM FILMSJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1992EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .2. THIN COBALT FILMSJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-Jul-1992FILM THICKNESS EFFECT ON THE EPITAXIAL-GROWTH OF COSI2 ON SI(111)JUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1993FORMATION OF EXCELLENT SHALLOW N+P JUNCTIONS BY AS+ IMPLANTATION INTO THIN COSI FILMS ON SI SUBSTRATELIN, CT; JUANG, MH; CHU, CH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-Apr-1992FORMATION OF P(+)N JUNCTIONS BY SI(+)+B(+) IMPLANTATION AND LASER ANNEALINGJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1992FORMATION OF SELF-ALIGNED TISI2 P+-N JUNCTIONS BY IMPLANTING BF2+ IONS THROUGH THIN TI OR SIO2 FILM ON SI SUBSTRATE RAPID THERMAL ANNEALINGJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Sep-1994FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMSLIN, CT; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC; 奈米中心; Nano Facility Center
1-Apr-1992FORMATION OF SHALLOW P+N JUNCTIONS BY IMPLANTING BF2+ IONS INTO THIN COBALT FILMS ON SILICON SUBSTRATESJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1991GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111)SI AT LOW ANNEALING TEMPERATURES BY A NONULTRAHIGH VACUUM METHODCHENG, HC; JUANG, MH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Mar-1992INFLUENCE OF IMPLANT CONDITION ON THE TRANSIENT-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SILICONJUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-Mar-1992NOVEL ANNEALING SCHEME FOR FABRICATING HIGH-QUALITY TI-SILICIDED SHALLOW N+P JUNCTION BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATEJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1992NOVEL EFFECTS OF HEATING RATE ON THE ACTIVATION RECRYSTALLIZATION OF BORON-IMPLANTED SI SUBSTRATESJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Sep-1993NOVEL PHENOMENON OF THE AL-1 WT-PERCENT-SI CONTACTS ON THE NF3/AR POST-ETCHING-TREATED N-SI SUBSTRATESCHENG, HC; CHEN, YE; JUANG, MH; YEN, PW; LIN, L; 奈米中心; Nano Facility Center
30-Aug-1993THE PROCESS LIMITATION FOR FORMING TI SILICIDED SHALLOW JUNCTION BY BF(2)+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS AND SUBSEQUENT TI SILICIDATIONJUANG, MH; LIN, CT; JAN, ST; CHENG, HC; 電控工程研究所; Institute of Electrical and Control Engineering
1-Apr-1992THE REVERSE ANNEAL OF JUNCTION CHARACTERISTICS IN FORMING SHALLOW P+-N JUNCTION BY BF-2(+) IMPLANTATION INTO THIN CO FILMS ON SI SUBSTRATEJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Jul-1994SHALLOW JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN COSI FILMS AND RAPID THERMAL ANNEALINGJUANG, MH; LIN, CT; CHENG, HC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 24  next >