| Issue Date | Title | Author(s) |
| 21-Aug-1995 | ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION | TSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-Apr-1994 | CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE | CHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering |
| 15-Oct-1994 | CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION | JUNG, TG; CHANG, CY; LIU, CS; CHANG, TC; LIN, HC; TSAI, WC; HUANG, GW; CHEN, LP; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-Aug-1994 | EFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURES | LIN, HC; LIN, HY; CHANG, CY; JUNG, TG; WANG, PJ; DENG, RC; LIN, JD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Sep-1994 | EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMS | LIN, HC; CHANG, CY; CHEN, WH; TSAI, WC; CHANG, TC; JUNG, TG; LIN, HY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 26-Sep-1994 | FABRICATION OF P-CHANNEL POLYCRYSTALLINE SI1-XGEX THIN-FILM TRANSISTORS BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION | LIN, HC; JUNG, TG; LIN, HY; CHANG, CY; CHEN, LP; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-Jan-1994 | LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION | JUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-Apr-1994 | NANOMETER THICK SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE | CHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; WANG, PJ; LEE, TL; CHEN, LJ; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center |
| 1-Dec-1994 | QUANTUM CONFINEMENT EFFECTS OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE | CHANG, TC; CHANG, CY; JUNG, TG; CHEN, PA; TSAI, WC; WANG, PJ; CHEN, YF; PAN, SC; 電控工程研究所; Institute of Electrical and Control Engineering |
